GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
Heavy doping effects in Mg-doped GaN
The electrical properties of p-type Mg-doped GaN are investigated through variable-
temperature Hall effect measurements. Samples with a range of Mg-doping concentrations …
temperature Hall effect measurements. Samples with a range of Mg-doping concentrations …
Group III nitride semiconductors for short wavelength light-emitting devices
JW Orton, CT Foxon - Reports on progress in physics, 1998 - iopscience.iop.org
The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …
Hole conductivity and compensation in epitaxial GaN: Mg layers
U Kaufmann, P Schlotter, H Obloh, K Köhler, M Maier - Physical Review B, 2000 - APS
The concentration p and the mobility μ of holes in metal-organic chemical vapor deposition
(MOCVD) GaN: Mg layers were studied by room temperature Hall-effect measurements as a …
(MOCVD) GaN: Mg layers were studied by room temperature Hall-effect measurements as a …
Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes
This letter reports the avalanche and surge current ruggedness of the industry's first 1.2-kV-
class vertical GaN pn diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN …
class vertical GaN pn diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN …
Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
JK Ho, CS Jong, CC Chiu, CN Huang… - Journal of Applied …, 1999 - pubs.aip.org
Group III nitride semiconductors have attracted great attention in recent years owing to the
successful commercialization of light emitting diodes from ultraviolet to visible range1–5 and …
successful commercialization of light emitting diodes from ultraviolet to visible range1–5 and …
Enhanced Mg doping efficiency in Al0. 2Ga0. 8N/GaN superlattices
P Kozodoy, M Hansen, SP DenBaars… - Applied physics …, 1999 - pubs.aip.org
High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The
measured hole concentration at room temperature is over 2.51018 cm 3, more than ten …
measured hole concentration at room temperature is over 2.51018 cm 3, more than ten …
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review
The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely
recognized as promising materials for novel electronic and optoelectronic device …
recognized as promising materials for novel electronic and optoelectronic device …
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
The hole-transport properties of Mg-doped AlGaN/GaN superlattices are carefully examined.
Variable-temperature Hall-effect measurements indicate that the use of such superlattices …
Variable-temperature Hall-effect measurements indicate that the use of such superlattices …