In this work, the characterization and analysis of the physics of a GaAs quantum well with
AlGaAs barriers were carried out, according to an interior doped layer. An analysis of the …

The enhancement of transport and quantum lifetimes of electrons in barrier delta-doped Al
0.3 Ga 0.7 As/In 0.15 Ga 0.85 As pseudomorphic Double-Quantum-Well structure is …

The low-temperature electron transport (τ t) and quantum (τ q) lifetimes are modulated as a
function of applied electric field (F) in Al 0.3 Ga 0.7 As/In 0.15 Ga 0.85 As-based symmetric …

The effect of Bi incorporation into In x Ga 1-x As lattice on the nanosecond pulsed electric
field dependence of the drift velocity of electrons in n-type In x Ga 1-x As 1-y Bi y alloys with …

The effect of neutron irradiation on the structural, optical, and electronic properties of doped
strained heterostructures with AlGaAs/InGaAs/GaAs and AlGaAs/InGaAs/AlGaAs quantum …

The impact of interface defect states on the recombination and transport properties of
charges in asymmetric modulation-doped InGaAs/GaAs quantum wells (QWs) is …

This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for
broadband receivers with flat gain, low noise and high linearity. Bias and parasitic …

The effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained
superlattices and InGaAs/AlGaAs PHEMT structures grown by molecular beam epitaxy was …

Описывается опыт разработки полностью отечественного технологического процесса
на основе РНЕМТ технологии с длиной затвора 150 нм для создания СВЧ монолитных …

The dependence of photoluminescence spectra from AlGaAs/InGaAs/GaAs quantum well
with single-sided doping is investigated as a function of sheet electron concentration. The …