Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization
For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …
Stark shift and exciton binding energy in parabolic quantum dots: hydrostatic pressure, temperature, and electric field effects
The temperature, hydrostatic pressure, and external electric field effects on the confined
exciton in cylindrical quantum dots by considering a parabolic confining potential are …
exciton in cylindrical quantum dots by considering a parabolic confining potential are …
Intrasubband-related linear and nonlinear optical absorption in single, double and triple QW: the compositions, temperature and QW's number effects
This paper exhibits a numerical simulation study of the 1s→ 2p ISB-related linear and
nonlinear optical absorption in single, double, and triple QWs considering the effects of the …
nonlinear optical absorption in single, double, and triple QWs considering the effects of the …
Tailoring optoelectronic properties of InGaN-based quantum wells through electric field, indium content, and confinement shape: A theoretical investigation
This paper conducts a comprehensive theoretical examination of the electronic and optical
responses, including linear and nonlinear optical responses, of an InGaN-based quantum …
responses, including linear and nonlinear optical responses, of an InGaN-based quantum …
Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress
This work investigates the effect of current stress on InGaN/GaN multiple-quantum-well flip-
chip blue micro light-emitting diodes (μ-LEDs) with a mesa size of 30× 30 μm 2 and …
chip blue micro light-emitting diodes (μ-LEDs) with a mesa size of 30× 30 μm 2 and …
Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency
Herein, how the macroscopic characterizations can be utilized to extract information on the
defect level and crystal quality of the epitaxial layers of the light‐emitting diodes (LEDs) is …
defect level and crystal quality of the epitaxial layers of the light‐emitting diodes (LEDs) is …
Enhanced P-type GaN conductivity by Mg delta doped AlGaN/GaN superlattice structure
Y Zhao, S Xu, H Tao, Y Zhang, C Zhang, L Feng… - Materials, 2020 - mdpi.com
A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to
achieve a high conductivity p-type GaN layer. The experimental results provided the …
achieve a high conductivity p-type GaN layer. The experimental results provided the …
Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes
We investigate the differences in optoelectronic performances of InGaN/AlGaN multiple-
quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different …
quantum-well (MQW) near-ultraviolet light-emitting diodes by using samples with different …
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous …
JH Lee, ABMH Islam, TK Kim, YJ Cha… - Photonics Research, 2020 - opg.optica.org
The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO)
treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ …
treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode (μ …
Improvement of Ti/Al ohmic contacts on N-face n-type GaN by using O2 plasma treatment
H Seo, YJ Cha, ABMH Islam, JS Kwak - Applied Surface Science, 2020 - Elsevier
The effect of O 2 plasma treatment on the electrical properties of Ti/Al (20/200 nm) contact to
N (Nitrogen)-face n-GaN of vertical light-emitting diodes (VLEDs) has been investigated by …
N (Nitrogen)-face n-GaN of vertical light-emitting diodes (VLEDs) has been investigated by …