Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

In recent years synchrotron x-ray microprobes and nanoprobes have emerged as key
characterization tools with a remarkable impact for different scientific fields including solid …

Memristive devices are promising components for nanoelectronics with applications in
nonvolatile memory and storage, defect-tolerant circuitry, and neuromorphic computing …

HfO x/AlO x bilayer resistive switching devices were fabricated for the study of the switching
dynamics of the metal oxide memory. An exponential voltage-time relationship was …

18 O/16 O exchange and subsequent time-of-flight secondary ion mass spectrometry (ToF-
SIMS) analysis was employed to investigate the transport of oxygen, and thus the behavior …

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is
highly desired for the multi-level control of ReRAM. In this paper we present a systematic …

We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples
grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of …

In this paper, we show the coexistence of the bipolar and unipolar resistive-switching modes
in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the …

To solve the" big data" problems that are hindered by the Von Neumann bottleneck and
semiconductor device scaling limitation, a new efficient in-memory computing architecture …

In this study, a simple TiN/SiO2/p-Si tunneling junction structure was fabricated via thermal
oxidation growth on a Si substrate annealed at 600° C. After electroforming, the number of …