This article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs),
focusing on broadband design techniques. An overview of the main solid-state technologies …

Due to the rise of 5G, IoT, AI, and high-performance computing applications, datacenter
traffic has grown at a compound annual growth rate of nearly 30%. Furthermore, nearly three …

In this article, a load-modulation enhanced wideband compact high-efficiency millimeter-
wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) …

To accommodate growing user demand for faster data rates and extensive connectivity,
modern wireless communication systems must evolve to support a sharply increasing …

This letter presents the design and characterization of a Doherty power amplifier for K-band
applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of …

In this article, a linearity-improved millimeter-wave (mm-wave) gallium nitride (GaN)
monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) is presented …

In this paper, a Ka/Q dual-band Doherty power amplifier (DPA) with simplified offset lines is
implemented in a 0.1-μm gallium arsenide (GaAs) process. It is found that the dual-band …

In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …

This contribution is focused on the experimental characterization of a Doherty Power
Amplifier (DPA) realized on a 100 nm gate length Gallium Nitride on Silicon (GaN-Si) …

In this article, a wideband linearization technique for distributed amplifiers (DAs) is
presented. In particular, an auxiliary transistor is employed to create additional …