This paper presents a critical and detailed overview of experimental techniques for the
extraction of the thermal resistance of bipolar transistors from simple DC current/voltage …

This paper presents a comprehensive overview of nonlinear thermal effects in bipolar
transistors under static conditions. The influence of these effects on the thermal resistance is …

A comparative RF reliability study of state-of-the-art SiGe HBT and InP HBT process
technologies is presented. The static transistor breakdown voltages are experimentally …

This paper addresses the problem of modeling nonlinear thermal effects in bipolar
transistors under static conditions. The impact of these effects on the thermal resistance is …

The thermal resistance of SiGe heterojunction bipolar transistors (HBTs) is characterized
and modeled at cryogenic temperatures up to room temperature (RT). A physics-based …

Carriers are currently introducing 5G wireless systems at sub-6, 28, 38, 57–71, and 71–86
GHz. As 5G is commercially deployed, research into the next-generation communication …

HICUM/L2 model extensions for accurate scalable compact modeling of a state-of-the-art
InP/InGaAs DHBT technology are presented. It is shown that the resulting HICUM/L2 model …

This paper aims at determining RF operating limits of SiGe HBTs. Long-term stress tests
consisting of RF large-signal stress and periodic measurements of small-signal parameters …

This paper presents a review on the electro-thermal investigation of SiGe HBT technologies.
After introducing a simple method of measuring thermal resistance (R TH), analytical studies …

Kurzfassung Silizium-Germanium (SiGe) Heterojunction-Bipolartransistoren (HBTs) werden
aufgrund ihrer hohen Verstärkung und Geschwindigkeit sowie der Integration in die …