A SiGe terahertz heterodyne imaging transmitter with 3.3 mW radiated power and fully-integrated phase-locked loop
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology (f T/f max=
220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators based on …
220/280 GHz) is reported. This transmitter consists of a 4× 4 array of radiators based on …
A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
A wideband frequency multiplier that effectively generates and combines the even
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
harmonics from multiple transistors is proposed. It takes advantage of standing-wave …
Devices and circuits in CMOS for THz applications
Recent advances of CMOS technology and circuits have made it an alternative for realizing
capable and affordable THz systems. With process and circuit optimization, it should be …
capable and affordable THz systems. With process and circuit optimization, it should be …
A Simple Technology for Designing Ultrawideband Rectifiers
YY Xiao, JH Ou, SF Bo, W Che… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The key difficulty for designing a wideband rectifier is to match the impedance of rectifying
diodes at wide frequency range. In conventional works, the circuit topology and matching …
diodes at wide frequency range. In conventional works, the circuit topology and matching …
28-GHz passive frequency tripler with n-type varactors in 45-nm SOI CMOS
N Zhang, L Belostotski… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
A 28-GHz passive frequency tripler for 5G New Radio (NR) is demonstrated in 45-nm SOI
CMOS. A symmetric antiparallel pair of series varactor (SAPSV) topology is proposed to …
CMOS. A symmetric antiparallel pair of series varactor (SAPSV) topology is proposed to …
D-Band Broadband Passive Frequency Tripler Using Antiparallel Diode-Connected nMOS Transistor Pair in 22-nm CMOS SOI
N Zhang, L Belostotski… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
This letter describes a-band antiparallel diode-connected nMOS-transistor-pair frequency
tripler that is capable of operating over 27.8% 5-dB bandwidth (from 93 to 123 GHz) and …
tripler that is capable of operating over 27.8% 5-dB bandwidth (from 93 to 123 GHz) and …
A 195–244 GHz CMOS self-mixing frequency tripler with> 23 dBc fundamental rejection
Z Lin, Y Shen, Y Ding, J Zou, S Hu - AEU-International Journal of …, 2024 - Elsevier
This paper presents a wideband and high-fundamental rejection self-mixing frequency
tripler in a 40-nm CMOS. The proposed tripler consists of an input half-shielded transformer …
tripler in a 40-nm CMOS. The proposed tripler consists of an input half-shielded transformer …
Relations of time-varying circuit parameters and idlerless parametric harmonic generation for reconfigurable frequency multipliers
N Zhang, L Belostotski… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The idlerless relations between parametric harmonic generation and time-varying circuit
parameters, such as elastance (), capacitance (), conductance (), and resistance (), are …
parameters, such as elastance (), capacitance (), conductance (), and resistance (), are …
Application of Taguchi method in optimization of structural parameters in self-switching diode to improve the rectification performance
This paper presents the use of Taguchi method in the optimization process of a Self-
switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for …
switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for …
Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors
Frequency multipliers, a class of essential electronic components, play a pivotal role in
contemporary signal processing and communication systems. They serve as crucial building …
contemporary signal processing and communication systems. They serve as crucial building …