Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
Ge CMOS is very attractive for the post size-scaled Si-CMOS. However, we have to tackle a
number of challenges with regard to materials and their interface control. In this paper, we …
number of challenges with regard to materials and their interface control. In this paper, we …
Desorption kinetics of GeO from GeO2/Ge structure
High-κ dielectrics on Ge have recently attracted much attention as a potential candidate to
replace planar silicon transistors for sub-32-nm generations. However, the instability of the …
replace planar silicon transistors for sub-32-nm generations. However, the instability of the …
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation
R Zhang, T Iwasaki, N Taoka, M Takenaka… - Applied Physics …, 2011 - pubs.aip.org
An electron cyclotron resonance (ECR) plasma postoxidation method has been employed
for forming Al 2 O 3/GeO x/Ge metal-oxide-semiconductor (MOS) structures. X-ray …
for forming Al 2 O 3/GeO x/Ge metal-oxide-semiconductor (MOS) structures. X-ray …
High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3
This letter presents a significant improvement of electron mobility in a germanium (Ge) n-
channel metal–oxide–semiconductor field-effect transistor with a yttrium oxide (Y 2 O 3) gate …
channel metal–oxide–semiconductor field-effect transistor with a yttrium oxide (Y 2 O 3) gate …
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature
IZ Mitrovic, M Althobaiti, AD Weerakkody… - Journal of Applied …, 2014 - pubs.aip.org
A study into the optimal deposition temperature for ultra-thin La 2 O 3/Ge and Y 2 O 3/Ge
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …
Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O
GeO desorption from a GeO 2/Ge stack is a critical concern in Ge metal oxide semiconductor
field effect transistors (MOSFETs). In this contribution, we focus on a uniform-desorption …
field effect transistors (MOSFETs). In this contribution, we focus on a uniform-desorption …
High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as …
Enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (MOSFET)
on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) LaLuO …
on germanium-on-insulator substrate is fabricated with atomic-layer-deposited (ALD) LaLuO …
Ab initio molecular dynamics simulations of properties of a-Al2O3/vacuum and a-ZrO2/vacuum vs a-Al2O3∕ Ge (100)(2× 1) and a-ZrO2∕ Ge (100)(2× 1) interfaces
EA Chagarov, AC Kummel - The Journal of chemical physics, 2009 - pubs.aip.org
The local atomic structural properties of a-Al 2 O 3, a-Zr O 2 vacuum/oxide surfaces, and a-
Al 2 O 3∕ Ge (100)(2× 1), a-Zr O 2∕ Ge (100)(2× 1) oxide/semiconductor interfaces were …
Al 2 O 3∕ Ge (100)(2× 1), a-Zr O 2∕ Ge (100)(2× 1) oxide/semiconductor interfaces were …
Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a …
EA Chagarov, AC Kummel - Surface science, 2009 - Elsevier
The structural properties of a-Al2O3/Ge, a-Al2O3/In0. 5Ga0. 5As and a-Al2O3/In0. 5Al0.
5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular …
5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular …