For a long time now, 3C-SiC has attracted attention of the semiconductor community due to
its very interesting properties. The lack of commercial 3C-SiC seeds for epitaxy has forced …

Solving the green gap problem is a key challenge for the development of future LED-based
light systems. A promising approach to achieve higher LED efficiencies in the green spectral …

A theoretical study of Al 1− x Ga x N⁠, based on the full-potential linearized augmented
plane wave method, is used to investigate the variations in the bandgap, optical properties …

The lack of internal polarization fields in cubic group-III nitrides makes them promising
arsenic-free contenders for next-generation high-performance electronic and optoelectronic …

Cubic nitrides are candidate materials for next-generation optoelectronic applications as
they possess no internal fields and promise to cover large parts of the electromagnetic …

GaN growth on Si is very attractive for low‐cost optoelectronics and high‐frequency, high‐
power electronics. It also opens a route towards an integration with Si electronics. Early …

Magnetism induced by the localized defect states in the otherwise “nonmagnetic” sp
semiconductors—GaN and ZnO—is investigated using ab initio methods. The defects …

In this paper we report a theoretical study of the structural, elastic, electronic and
piezoelectric properties of zinc-blende AlN and GaN under the pressure effect. The study is …

Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and
their widespread usage in lighting can induce significant worldwide electricity savings. To …

Based on all-electron density functional theory calculations, we systematically investigate
the electronic structure of (0001)-oriented wurtzite (wz) and (111)-,(100)-, and (110)-oriented …