Doped polycrystalline silicon (poly-Si), when coupled with a thin SiO 2 interlayer, is of large
interest for crystalline silicon (c-Si) solar cells due to its outstanding passivating contact …

The currently used bulk analysis and depth profiling methods for hydrogen in inorganic
materials and inorganic coatings are reviewed. Bulk analysis of hydrogen is based on fusion …

It has previously been shown that ex situ phosphorus-doped polycrystalline silicon on silicon
oxide (poly-Si/SiO x) passivating contacts can suffer a pronounced surface passivation …

Hydrogenation of poly-Si based passivating contacts (TOPCon) is an essential process to
achieve a very high level of surface passivation, especially on textured surface. This …

Double-sided, front and rear, tunnel oxide passivated contact (TOPCon) of crystalline silicon
(c-Si) solar cells on textured wafer is presented. The double-sided TOPCon structure is …

We determined the density of defect states of poly-Si/SiO x/c-Si junctions featuring a wet
chemical interfacial oxide from lifetime measurements using the MarcoPOLO model to …

Tunnelling oxide passivated contact (TOPCon) solar cells are gaining significant commercial
interest, due to the potential for high efficiency. Industrially, this passivated contact scheme is …

Passivating contacts based on SiO x/poly-Si exhibit excellent contact and surface
passivation properties enabling very high solar cell conversion efficiencies. In this paper, we …

This study focuses on enhancing the performance of n-type Tunnel Oxide Passivated
Contact (TOPCon) solar cells by exploring the optimization of both front and rear film layers …

Stability of the passivation quality of poly‐Si on oxide junctions against the conventional
mainstream high‐temperature screen‐print firing processes is highly desirable and also …