Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances
The incubation of strained nano-system in the form of tri-layered structure as nanowire
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
[PDF][PDF] Optimization of 14nm Horizontal Double Gate for Optimum Threshold Voltage Using L9 Taguchi Method.
N Nizam, AM AH, F Salehuddin… - International …, 2022 - ijneam.unimap.edu.my
Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
[PDF][PDF] Work function variations on electrostatic and RF performances of JLSDGM Device
KE Kaharudin, F Salehuddin, ASM Zain… - Indonesian Journal of …, 2021 - researchgate.net
This paper offers a systematic analysis on the impact of work function (WF) variations on
electrostatic and radio frequency (RF) performances of nchannel junctionless strained …
electrostatic and radio frequency (RF) performances of nchannel junctionless strained …
3D Junctionless-FET technology: A comparative TCAD simulation study with FinFET and NSGAAFET
L Scognamiglio - 2022 - webthesis.biblio.polito.it
The progress of semiconductor electronics devices has been marked by rapid improvement
in terms of performance since the first MOSFET was invented in 1960. In the last decades …
in terms of performance since the first MOSFET was invented in 1960. In the last decades …