Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

We overview recent progress in growth aspects of group III-nitride heterostructures for deep
ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth …

We report on the growth of low-defect thick films of AlN and AlGaN on trenched
AlGaN/sapphire templates using migration enhanced lateral epitaxial overgrowth …

Epitaxial lateral overgrowth (ELO) of high-quality AlN layers on trench-patterned AlN
underlying layers has been demonstrated by high-temperature metal-organic vapor phase …

Growth conditions for AlN in two dimensional (2D) and three dimensional (3D) growth
modes were explored on SiC using metal organic chemical vapor deposition. High quality …

The authors report on pulsed lateral epitaxial overgrowth of aluminum nitride films on basal
plane sapphire substrates. This approach, at temperatures in excess of 1150 C⁠, enhanced …

A high-quality thick AlN layer without cracks was grown on sapphire by the combination of
the high-temperature metal-organic vapor phase epitaxial growth and epitaxial lateral …

The gain and photoresponse characteristics have been numerically studied for back-
illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes …

In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors
(HEMTs) on vicinal c-plane sapphire substrates with different misoriented angles are …

We report the first ever room temperature (RT) stimulated emission at 214 nm using high
quality AlN layers that were grown over patterned sapphire substrates by pulsed lateral …