Analysis of type IIb synthetic diamond using FTIR spectrometry
IV Klepikov, AV Koliadin… - IOP Conference Series …, 2017 - iopscience.iop.org
Abstract Analysis of internal structure in large IIb-type high pressure-high temperature
(HPHT) synthetic single-crystal diamond are presented. The concentration of boron impurity …
(HPHT) synthetic single-crystal diamond are presented. The concentration of boron impurity …
Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films
LC Hao, ZA Chen, DY Liu, WK Zhao, M Zhang… - Chinese …, 2023 - iopscience.iop.org
This work investigates the suppression and compensation effect of oxygen on the behaviors
and characteristics of heavily boron-doped microwave plasma chemical vapor deposition …
and characteristics of heavily boron-doped microwave plasma chemical vapor deposition …
The regulation effect of trace amount of oxygen on the properties of p-type boron-doped diamond
G Zhao, K Tang, Y Teng, W Zhao, K Yang… - Journal of Materials …, 2024 - Springer
The light doping behavior of boron in microwave plasma chemical vapor deposition
diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) …
diamond films by trace oxygen was investigated. As the oxygen concentration (O/C) …
Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility
XY Miao, HA Ma, ZF Zhang, LC Chen, LJ Zhou… - Chinese …, 2021 - iopscience.iop.org
We synthesized and investigated the boron-doped and boron/nitrogen co-doped large
single-crystal diamonds grown under high pressure and high temperature (HPHT) …
single-crystal diamonds grown under high pressure and high temperature (HPHT) …
Homoepitaxial growth of single crystal diamond by microwave plasma chemical vapor deposition
L Yan, Z Ma, L Chen, Q Fu, C Wu, P Gao - Carbon, 2017 - ui.adsabs.harvard.edu
Homoepitaxial growth of single crystal diamond on a diamond substrate prepared by the
high pressure high temperature method was carried out by microwave plasma chemical …
high pressure high temperature method was carried out by microwave plasma chemical …
MPCVD 法同质外延生长单晶金刚石
严垒， 马志斌， 陈林， 付秋明， 吴超， 高攀 - 新型炭材料(中英文), 2017 - xxtcl.sxicc.ac.cn
利用微波等离子体化学气相沉积(MPCVD) 法在高温高压(HPHT) 下制备的单晶片上进行单晶
金刚石同质外延生长, 研究了甲烷浓度和衬底温度对金刚石生长的影响. 利用扫描电子显微镜与 …
金刚石同质外延生长, 研究了甲烷浓度和衬底温度对金刚石生长的影响. 利用扫描电子显微镜与 …
Effect of nitrogen on the growth of boron doped single crystal diamond
Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100)
Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A …
Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A …
ПРИМЕСНЫЙ СОСТАВ И КАТОДОЛЮМИНЕСЦЕНЦИЯ НРНТ-АЛМАЗА ТИПА IIB С КОНЦЕНТРАЦИЕЙ БОРА ДО 60 PPM
ВА КРАВЕЦ, ИB КЛЕПИКОВ… - ОПТИКА И …, 2023 - elibrary.ru
Проведено исследование монокристаллической многосекторной пластины из НРНТ-
алмаза типа IIb методами локальной катодолюминесценции (СL) при температуре 77 K …
алмаза типа IIb методами локальной катодолюминесценции (СL) при температуре 77 K …
Growth morphology of boron doped single crystal diamond
Boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100)
Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A …
Type Ib diamond substrates using microwave plasma assisted chemical vapor deposition. A …
Homoepitaxial Deposition of Boron-doped Single Crystal Diamond
SKL Karna - 2013 - digitalcommons.library.uab.edu
The boron-doped single crystal diamond films were grown homoepitaxially on synthetic
(100) Type Ib diamond substrates using a microwave plasma assisted chemical vapor …
(100) Type Ib diamond substrates using a microwave plasma assisted chemical vapor …