In this article, we propose an explicit and analytic charge-based model for estimating short-
channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The …

AlGaN/GaN HEMTs with several different designs of field plate structure are studied for
device optimization purposes. To increase device breakdown voltage, optimal dimensions of …

The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-
Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on …

We show that N-polar Ga N/(Al, Ga) N/Ga N heterostructures exhibit significant N deficiency
at the bottom (Al, Ga) N/Ga N interface, and that these N vacancies are responsible for the …

In this article, we use a semiclassical low-field mobility modeling framework, which includes
all relevant scattering mechanisms, to examine the dependence of electron mobility on 2-D …

Abstract The performance of AlGaN/GaN High-Electron Mobility Transistors (HEMTs)
fabricated on< 1 1 1> silicon substrates has been experimentally investigated, aiming to …

Monolithically integrated Ga As pin diodes are demonstrated on 300-mm Si (001) substrates
using a nanoridge-engineering approach. Deep-level transient spectroscopy (DLTS) is used …

Carbon nanotubes (CNTs) can be locally grown on custom-designed CMOS microheaters
by a thermal chemical vapour deposition (CVD) process to utilize the sensing capabilities of …

In this work, the DC behavior of AlGaN/GaN Metal-Insulator-Semiconductor high electron
mobility transistors (MO (I) SHEMTs) with two different gate dielectrics (Al 2 O 3 and Si 3 N 4) …

In this study, the effect of Si XNY bilayer passivation materials on the electrical properties of
an AlGaN high electron mobility transistor (HEMT) was investigated. AlGaN/GaN HEMTs …