Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal …

R Gourishetty, SR Shriram, DP Panda… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The stoichiometric variations in molecular beam epitaxy (MBE)-grown In (Ga) As quantum
dots (QDs) after rapid thermal processing (RTP) is estimated from an analytical model …

Efficiency enhancement of solar cells using multi-layer interdiffused InGaAs/GaAs quantum dots: A numerical approach

A Rai, SSA Askari, MK Das, S Kumar - Micro and Nanostructures, 2022 - Elsevier
In this work, a mathematical model has been developed to analyze the effect of the number
of quantum dot layers on the performance of solar cells. We have developed an analytical …

Effects of In, Sb and N Alloyed Capping on the Electronic Band Structures of Vertically Coupled InAs SK-SML Quantum Dot System

R Gourishetty, S Chakrabarti - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The effects of strain, quantum confinement, and composition on the optical and electronic
properties of vertically-coupled InAs/GaAs quantum dots (QDs) capped with a thin layer …

Investigation of strain propagation, optical, and structural properties of a novel heterostructure with multilayer Stranski-Krastanov (SK) strain-coupled quantum dots …

R Saha, FSA Sabiha, R Gourishetty… - … and Simulation of …, 2024 - spiedigitallibrary.org
The current work shows a novel multilayer heterostructure with Stranski-Krastanov (SK)
quantum dots (QDs), which shows the relatively superior performance in terms of strain …

Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate

R Saha, FSA Sabiha, R Gourishetty… - Infrared Sensors …, 2023 - spiedigitallibrary.org
Conventional InAs/GaAs QD heterostructures are drawing the significant amount of interest
among the worldwide researchers due to the excellent carrier confinement, high optical …