Deep traps in GaN-based structures as affecting the performance of GaN devices
AY Polyakov, IH Lee - Materials Science and Engineering: R: Reports, 2015 - Elsevier
New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …
to compensation and recombination in these materials are discussed. New results on …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Deep-ultraviolet light-emitting diodes
Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …
Reliability of commercial UVC LEDs: 2022 state-of-the-art
With this study, we report on the reliability of the most recent commercial UVC LED devices.
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
The current COVID-19 pandemic urged the development of antiviral technologies, and one …
[HTML][HTML] Excess noise in high-current diamond diodes
We report the results of an investigation of low-frequency excess noise in high-current
diamond diodes. It was found that the electronic excess noise of the diamond diodes is …
diamond diodes. It was found that the electronic excess noise of the diamond diodes is …
Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs
There are numerous applications for deep UV AlGaN Light-Emitting Diodes (LEDs) in virus
inactivation, air and water purification, sterilization, bioagent detection and UV polymer …
inactivation, air and water purification, sterilization, bioagent detection and UV polymer …
Current-induced degradation of high performance deep ultraviolet light emitting diodes
CG Moe, ML Reed, GA Garrett, AV Sampath… - Applied Physics …, 2010 - pubs.aip.org
Lifetime measurements on single-chip, packaged 285 nm light-emitting diodes (LEDs)
performed under constant current injection at 20 and 75 mA, were compared to the …
performed under constant current injection at 20 and 75 mA, were compared to the …
Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate
SF Chichibu, K Nagata, M Oya, T Kasuya… - Applied Physics …, 2023 - pubs.aip.org
Degradation mechanisms of 275-nm-band Al x Ga 1-x N multiple quantum well deep-
ultraviolet light-emitting diodes fabricated on a (0001) sapphire substrate were investigated …
ultraviolet light-emitting diodes fabricated on a (0001) sapphire substrate were investigated …
High current-induced degradation of AlGaN ultraviolet light emitting diodes
A Pinos, S Marcinkevičius, MS Shur - Journal of Applied Physics, 2011 - pubs.aip.org
Degradation under high current stress of AlGaN quantum well based light emitting diodes
emitting at 285 and 310 nm has been studied using electroluminescence, time-resolved …
emitting at 285 and 310 nm has been studied using electroluminescence, time-resolved …