This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

Infrared photoluminescence (PL) from lnSb, InAs, and InAsl_xSbx (x< 0.3) epitaxial layers
grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated …

Modeling of the growth process is required for the synthesis of III–V ternary nanowires with
controllable composition. Consequently, new theoretical approaches for the description of …

III-V ternary nanowires and nanowire heterostructures offer almost unlimited possibilities for
the band-gap design and can be integrated with Si electronic platform. Most of such …

Understanding and controlling the composition of III-V ternary nanomaterials is essential for
band-gap tunability and fabrication of functional nanoheterostructures. The kinetic approach …

Long‐wavelength InAs1− x Sb x photoconductors operated without cryogenic cooling are
reported. The devices are based on p‐InAs1− x Sb x/p‐InSb heterostructures grown on …

InAs 1-x Sb x films have been successfully prepared by molecular beam epitaxy on (100)
InAs substrates. Long-wavelength photoluminescence has been investigated over the …

The emergence of the Hg~ _xCdxTe as the most important intrinsic semiconductor alloy
system for infrared detection is well established. However, in spite of the achievements in …

Strained layer superlattices (SLSs) constitute a large new family of semiconductors whose
properties can be freely tailored in useful ways due to the flexibility of choice offered in …

We demonstrate metalorganic vapor phase epitaxy of InAs 1− x Sb x nanowires (x= 0.08–
0.77) for applications in high-speed electronics and long-wavelength optical devices. The …