Modelling interfaces in thin-film photovoltaic devices

MDK Jones, JA Dawson, S Campbell, V Barrioz… - Frontiers in …, 2022 - frontiersin.org
Developing effective device architectures for energy technologies—such as solar cells,
rechargeable batteries or fuel cells—does not only depend on the performance of a single …

Recent advances in silicon solar cell research using data science-based learning

R Jaiswal, M Martínez-Ramón… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
The application of machine learning techniques in silicon photovoltaics research and
production has been gaining traction. Learning from the existing data has given the potential …

TOPerc Solar Cell: An Integral Approach of Tunnel Oxide Passivated Contact (TOPCon) and Passivated Emitter and Rear Contact (PERC) Architectures for Achieving …

S Sadhukhan, S Acharyya, T Panda… - Energy …, 2023 - Wiley Online Library
Passivated emitter and rear contact (PERC) on p‐type mono silicon has a roadmap for
achieving> 24% efficiency. The decrease of the full‐area rear metal contact to partial rear …

Detailed study on the role of nature and distribution of pinholes and oxide layer on the performance of tunnel oxide passivated contact (TOPCon) solar cell

S Sadhukhan, S Acharya, T Panda… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Industrial silicon solar cells are now mostly based on aluminum back surface field (Al-BSF)
or passivated emitter rear cell (PERC) technologies on p-type crystalline silicon wafers …

Robust code-based modeling approach for advanced photovoltaics of the future

C Ogbonnaya, A Turan, C Abeykoon - Solar Energy, 2020 - Elsevier
Modeling and simulation of photovoltaics help to reduce development costs, design
turnaround time and facilitates better techno-economic decisions. However, there is a …

[HTML][HTML] Radiation effects on multi-channel Forksheet-FET and Nanosheet-FET considering the bottom dielectric isolation scheme

G Choi, J Jeon - Nuclear Engineering and Technology, 2024 - Elsevier
This study analyzes the single-event transient (SET) characteristics of alpha particles on
multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D …

Bayesian optimization of MOSFET devices using effective stopping condition

B Kim, M Shin - IEEE Access, 2021 - ieeexplore.ieee.org
Current nanometer-scale metal-oxide-semiconductor field-effect transistor (MOSFET)
devices exhibit short-channel, quantum, and self-heating effects, making modeling and …

Design of low voltage-power: negative capacitance charge plasma FinTFET for AIOT data acquisition blocks

A Dharmireddy, SR Ijjada - 2022 International Conference on …, 2022 - ieeexplore.ieee.org
The advancement of technological improvement are revved up to introduce the notion of
Artificial Intelligence of Things (AIOT) to eliminate human interaction in operation of the …

Improvement in the Performance of P-Type Tunnel Oxide Passivated Contact Solar Cell With Selective Tunneling Junctions Underneath the Contacts on Front Side

S Sadhukhan, S Acharya, T Panda… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Industrial silicon solar cells are now moving further from passivated emitter and rear contact
(PERC) toward Tunnel Oxide Passivated contact (TOPCon) technology. The efficiency of the …

[HTML][HTML] Analysis of thermal effects according to channel and drain contact metal distance

UH Lim, YS Song, H Kim, JH Kim - Case Studies in Thermal Engineering, 2025 - Elsevier
Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET),
multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical …