Dynamical memristors for higher-complexity neuromorphic computing

S Kumar, X Wang, JP Strachan, Y Yang… - Nature Reviews …, 2022 - nature.com
Research on electronic devices and materials is currently driven by both the slowing down
of transistor scaling and the exponential growth of computing needs, which make present …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Third-order nanocircuit elements for neuromorphic engineering

S Kumar, RS Williams, Z Wang - Nature, 2020 - nature.com
Current hardware approaches to biomimetic or neuromorphic artificial intelligence rely on
elaborate transistor circuits to simulate biological functions. However, these can instead be …

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

S Kumar, JP Strachan, RS Williams - Nature, 2017 - nature.com
At present, machine learning systems use simplified neuron models that lack the rich
nonlinear phenomena observed in biological systems, which display spatio-temporal …

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

VK Sangwan, D Jariwala, IS Kim, KS Chen… - Nature …, 2015 - nature.com
Continued progress in high-speed computing depends on breakthroughs in both materials
synthesis and device architectures,,,. The performance of logic and memory can be …

A scalable neuristor built with Mott memristors

MD Pickett, G Medeiros-Ribeiro, RS Williams - Nature materials, 2013 - nature.com
Abstract The Hodgkin–Huxley model for action potential generation in biological axons is
central for understanding the computational capability of the nervous system and emulating …

Mott memory and neuromorphic devices

Y Zhou, S Ramanathan - Proceedings of the IEEE, 2015 - ieeexplore.ieee.org
Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

S Batool, M Idrees, SR Zhang, ST Han, Y Zhou - Nanoscale Horizons, 2022 - pubs.rsc.org
The family of two-dimensional (2D) materials composed of atomically thin layers connected
via van der Waals interactions has attracted much curiosity due to a variety of intriguing …

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

MD Pickett, RS Williams - Nanotechnology, 2012 - iopscience.iop.org
We built and measured the dynamical current versus time behavior of nanoscale niobium
oxide crosspoint devices which exhibited threshold switching (current-controlled negative …

Capacitive effect: An original of the resistive switching memory

G Zhou, Z Ren, B Sun, J Wu, Z Zou, S Zheng, L Wang… - Nano Energy, 2020 - Elsevier
Interplay between ions and electrons endows memristor with promising applications from
the high density storages, memory logic gates to neuromorphic chips. The interplay-induced …