Surface steps strongly influence the surface chemistry of metal oxides, a detailed picture of
step charge and structure may help to understand reactivity and predict the performance of …

Studies of the physics underlying carrier transport characteristics and band bending of
semiconductors are critical for developing new types of devices. In this work, we investigated …

The surface potential on n-type Si (111)-7× 7 surface was measured at 78 K using high-
frequency heterodyne-Kelvin probe force microscopy (HF-he-KPFM) method with atomic …

The configuration of step edges on metal oxide surface is significant for understanding
fundamental reactivity and predicting the performance in catalysis. In this work, the …

Atomic-scale surface adsorption has been a significant research topic in recent years, with a
particular emphasis on the adsorption properties of Au/Si (111)-7× 7, which are vitally …