In this paper, we review the development of plasma engineering technology that improves
dramatically the production efficiency of OLED (organic light-emitting diode) displays and …

A phenomenology-based virtual metrology (VM) for monitoring SiO 2 etching depth was
proposed by Park (2015). It achieved high prediction accuracy by introducing newly …

Generation of the defect particles during the plasma-assisted metal dry etching process is
induced by the various mechanisms. Most of these mechanisms are caused by the non …

High‐aspect ratio contact (HARC) etching is a bottleneck step of the high‐definition organic
light emitting diode (OLED) display manufacturing processes. HARC process is frequently …

We analyzed how the features in plasma information based virtual metrology (PI-VM) for SiO
2 etching depth with variation of 5% contribute to the prediction accuracy, which is …

The main goal of the study is to make an optimization algorithm for plasma etch rate of
deposited thin films by adaptive neuro fuzzy inference system (ANFIS). ANFIS represent a …

Optical emission spectroscopy (OES) is a highly valuable tool for real-time monitoring of
plasma properties due to its non-intrusive and versatile nature. However, utilizing OES for …

In this work, the authors report a cost‐effective fabrication method for making gallium nitride
(GaN) light emitting diode (LED) arrays using SF6 plasma in a conventional reactive‐ion …

Neural interfaces provide a direct communication pathway between nervous systems and
the external environment. Clinical and therapeutic treatments for neurological diseases and …