Resonant Raman Scattering in Boron-Implanted GaN
Y Peng, W Wei, MF Saleem, K Xiao, Y Yang, Y Yang… - Micromachines, 2022 - mdpi.com
A small Boron ion (B-ion) dose of 5× 1014 cm− 2 was implanted in a GaN epilayer at an
energy of 50 keV, and the sample was subjected to high-temperature rapid thermal …
energy of 50 keV, and the sample was subjected to high-temperature rapid thermal …