There has been a significant global interest in the thin film transistor (TFT) due to its potential
use in flat panel display. A great deal of interest in zinc oxide (ZnO) based TFT has been …

Indium tin zinc oxide (ITZO) thin-film transistors (TFTs) with different channel structures are
investigated. The electrical performance and bias stress stability of bilayer-channel ITZO …

We report highly efficient inverted quantum-dot light emitting diodes (QLEDs) using an Al
doped ZnO (AZO)/Li doped ZnO (LZO) stack electron transport layer (ETL). An introduction of …

High-mobility zinc oxynitride (ZnON) semiconductors were grown by RF sputtering using a
Zn metal target in a plasma mixture of Ar, N2, and O2 gas. The RF power and the O2 to N2 …

In this study, we examined the effects of the annealing atmosphere on the electrical
performance and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film …

The 2D electron gas (2DEG) phenomenon that occurs at the amorphous thin film hetero‐
oxide interface attracts great attention since it can avoid the use of a single‐crystal oxide …

Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique
using a perfume atomizer and subsequently annealed under different temperatures from …

The dependence of electrical characteristics and gate bias stress stability of N-doped
InZnSnO (IZTO: N) thin film transistors (TFTs) on annealing atmosphere was investigated …

In this work, the study of annealing effects on electrical properties of Zinc Oxide Thin-film
Transistors is presented. The samples were annealed at 180° C under Nitrogen ambient …

Enhancement of the properties of zinc oxide (ZnO)-based Schottky diodes has been
explored using a combination of plasma-enhanced atomic layer deposition (PE-ALD) ZnO …