The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

The analysis and design of an RF-input sequential load modulated balanced power
amplifier (SLMBA) are presented in this article. Unlike the existing LMBAs, in this new …

A balanced-to-Doherty (B2D) mode-reconfigurable power amplifier (PA) is presented in this
article, which is endowed with a unique capability of maintaining high linearity and high …

A novel Doherty power amplifier (DPA) architecture with extended bandwidth is presented in
this paper. A modified load modulation network is introduced to provide impedance …

This article presents a wideband series-Doherty power amplifier (SDPA) for millimeter-wave
(mm-wave) fifth-generation (5G) applications. It features a compact two-step impedance …

A novel architecture to extend the bandwidth of the Doherty power amplifier (DPA) is
presented in this article. It is illustrated that two DPA modes at different frequency bands can …

A reconfigurable series/parallel quasi-balanced Doherty power amplifier (QB-DPA) is
presented with a unique capability of maintaining high linearity and high efficiency against …

A new type of wideband dual-input hybrid Doherty outphasing power amplifier (HDO-PA) is
developed in which the load-modulation scheme continuously converts as the frequency …

This article presents a highly linear Doherty power amplifier (DPA) based on phase
mismatch. When output phase mismatch (OPM) is introduced, ie, the phase shift of the …

In a conventional Doherty Power Amplifier (DPA), harmonic isolation is typically required
between the two transistors to prevent them from modulating each other at harmonic …