Various embodiments for improved power devices as well as their methods of manufacture,
packaging and circuitry incorporating the same for use in a wide variety of power electronic …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

(57) ABSTRACT A nitride semiconductor laser device has an improved stabil ity of the lateral
mode under high output power and a longer lifetime, so that the device can be applied to …

(57) ABSTRACT A high density vertical gain cell is realized for memory operation. The gain
cell includes a vertical MOS transistor used as a sense transistor having a floating body …

In accordance with an embodiment of the present invention, a MOSFET includes a first
semiconductor region of a first conductivity type, a gate trench which extends into the first …

US6150687A - Memory cell having a vertical transistor with buried source/drain and dual gates
- Google Patents US6150687A - Memory cell having a vertical transistor with buried …

3,412.297 3.497, 777 3,564,356 3,660,697 4,003,072 4,011, 105 4,300,150 4.324, 038
4.326, 332 4,337,474 4,345,265 4,445,202 4,568,958 4,579,621 4,636,281 4,638,344 …

(57) ABSTRACT A method of manufacturing a semiconductor device having a charge
control trench and an active control trench with a thick oxide bottom includes forming a drift …

Evolutionary improvements in silicon (Si) power devices through better device designs,
processing techniques, and material quality have led to great advancements in power …

US PATENT DOCUMENTS 5,326,711 A 7/1994 Malhi 5,346,834 A 9, 1994. Hisamoto et al.
4,326,332 A 4, 1982 Kenney et al. 5,349,224 A 9, 1994 Gilbert et al. 4,337,474 A 6, 1982 …