Indirect excitons can be controlled by voltage, can travel over large distances before
recombination, and can cool down close to the temperature of semiconductor crystal lattice …

Indirect excitons (IXs) are explored both for studying quantum Bose gases in semiconductor
materials and for the development of excitonic devices. IXs were extensively studied in III–V …

Continuous-wave, time-integrated, and time-resolved photoluminescence experiments are
used to study the excitonic optical recombinations in wurtzite Zn O∕ Zn 0.78 Mg 0.22 O …

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below
the temperature of quantum degeneracy and can be effectively controlled by voltage and …

The assessment of the presence and the origin of an intrinsic internal electric field in novel
colloidal CdSe/CdS nanoheterostructures is of fundamental importance in order to …

Nitride-based light-emitting diodes (LEDs) are well known to suffer from a high built-in
electric field in the quantum wells (QWs). In this paper we determined to what extent the …

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane
epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane …

Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-
resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in …

We have measured the carrier recombination dynamics in InGaN/GaN multiple quantum
wells over an unprecedented range in intensity and time by means of time-resolved …

We report on the exciton propagation in polar (Al, Ga) N/GaN quantum wells over several
micrometers and up to room temperature. The key ingredient to achieve this result is the …