Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Hybrid multimodule DC–DC converters accelerated by wide bandgap devices for electric vehicle systems
In response to the growing demand for fast-charging electric vehicles (EVs), this study
presents a novel hybrid multimodule DC–DC converter based on the dual-active bridge …
presents a novel hybrid multimodule DC–DC converter based on the dual-active bridge …
An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT
The performance comparison and the temperature profile of AlGaN/GaN HEMT on different
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …
Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications
In this piece of work, a recessed gate field‐plated AlGaN/AlN/GaN HEMT on β‐Ga2O3
substrate is proposed and its performance characteristics are compared with HEMT structure …
substrate is proposed and its performance characteristics are compared with HEMT structure …
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on
the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high …
the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high …
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on …
The work function (φ m) of gate metal is crucial to electrical characteristics in standard GaN-
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …
based high electron mobility transistors (HEMTs). In this simulation report, RF & DC …
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
F Hájek, A Hospodková, P Hubík… - Semiconductor …, 2021 - iopscience.iop.org
The influence of dislocation density on the transport properties of high electron mobility
transistor (HEMT) structures is reported in this work. Experimental results, obtained on …
transistor (HEMT) structures is reported in this work. Experimental results, obtained on …
Intensive study of field-plated AlGaN/GaN HEMT on silicon substrate for high power RF applications
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …
Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is …
GaN HEMT on Si substrate with diamond heat spreader for high power applications
Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …
Thermally-activated failure mechanisms of 0.25\\mu\mathrm {m} $ RF AIGaN/GaN HEMTs submitted to long-term life tests
Z Gao, F Chiocchetta, F Rampazzo… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
Reliability and failure mechanism of 0.25\mumAlGaN/GaN HEMTs under thermal storage
tests and high temperature operating life (HTOL) tests have been evaluated. Results show …
tests and high temperature operating life (HTOL) tests have been evaluated. Results show …