Atom probe tomography 2012
TF Kelly, DJ Larson - Annual review of materials research, 2012 - annualreviews.org
In the world of tomographic imaging, atom probe tomography (APT) occupies the high-
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
spatial-resolution end of the spectrum. It is highly complementary to electron tomography …
X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
Atom probe tomography allows for three-dimensional reconstruction of the elemental
distribution in materials at the nanoscale. However, the measurement of the chemical …
distribution in materials at the nanoscale. However, the measurement of the chemical …
Composition mapping in InGaN by scanning transmission electron microscopy
We suggest a method for chemical mapping that is based on scanning transmission electron
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The …
Atom probe tomography on semiconductor devices
In this paper, state‐of‐the‐art Atom Probe Tomography (APT) on industrial semiconductor
products is reviewed to explore their device physics and to develop an understanding of …
products is reviewed to explore their device physics and to develop an understanding of …
Microstructural origins of localization in InGaN quantum wells
The startling success of GaN-based light emitting diodes despite the high density of
dislocations found in typical heteroepitaxial material has been attributed to localization of …
dislocations found in typical heteroepitaxial material has been attributed to localization of …
Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an …
A single nanoscale object containing a set of InGaN/GaN nonpolar multiple-quantum wells
has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution …
has been analyzed by microphotoluminescence spectroscopy (μPL), high-resolution …
Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0. 25Ga0. 75N
L Rigutti, L Mancini, D Hernández-Maldonado… - Journal of Applied …, 2016 - pubs.aip.org
The ternary semiconductor alloy Al 0.25 Ga 0.75 N has been analyzed by means of
correlated photoluminescence spectroscopy and atom probe tomography (APT). We find …
correlated photoluminescence spectroscopy and atom probe tomography (APT). We find …
Atom probe tomography of nitride semiconductors
Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
E Di Russo, N Cherkashin, M Korytov… - Journal of Applied …, 2019 - pubs.aip.org
Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …