[HTML][HTML] CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

MA Scarpulla, B McCandless, AB Phillips, Y Yan… - Solar Energy Materials …, 2023 - Elsevier
Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin
film photovoltaic technology and has intrinsically better temperature coefficients, energy …

Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy

A Klein - Journal of physics: Condensed matter, 2015 - iopscience.iop.org
Energy band alignment plays an important role in thin film solar cells. This article presents
an overview of the energy band alignment in chalcogenide thin film solar cells with a …

[图书][B] Chalcogenide photovoltaics: physics, technologies, and thin film devices

R Scheer, HW Schock - 2011 - books.google.com
This first comprehensive description of the most important material properties and device
aspects closes the gap between general books on solar cells and journal articles on …

Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells

YS Lee, J Heo, MT Winkler, SC Siah, SB Kim… - Journal of Materials …, 2013 - pubs.rsc.org
We demonstrate the potential of a nitrogen-doped cuprous oxide (Cu2O: N) film as a p-type
hole-transporting layer for photovoltaic devices. To reduce back-contact resistance and …

[HTML][HTML] Complementary interface formation toward high-efficiency all-back-contact perovskite solar cells

KJ Prince, M Nardone, SP Dunfield, G Teeter… - Cell Reports Physical …, 2021 - cell.com
Summary All-back-contact (ABC) architectures for perovskite photovoltaics represent
untapped potential for higher efficiency and enhanced durability compared to conventional …

Comparison of Mo and ITO back contacts in CIGSe solar cells: Vanishing of the main capacitance step

T Schneider, C Dethloff, T Hölscher… - Progress in …, 2022 - Wiley Online Library
Abstract Admittance measurements of Cu (In, Ga) Se2 (CIGSe) solar cells typically show at
least one capacitance step, the so‐called N1 signal. Its origin is still under debate, even …

[HTML][HTML] Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin …

AS Najm, P Chelvanathan, SK Tiong, MT Ferdaous… - Coatings, 2021 - mdpi.com
A CdS thin film buffer layer has been widely used as conventional n-type heterojunction
partner both in established and emerging thin film photovoltaic devices. In this study, we …

The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu (In, Ga) Se 2 solar cells prepared on indium-tin-oxide …

M Saifullah, D Kim, JS Cho, S Ahn, SJ Ahn… - Journal of Materials …, 2019 - pubs.rsc.org
Cu (In, Ga) Se2 (CIGSe) solar cells with absorber thicknesses of< 500 nm are important for
lowering the cost of photovoltaic (PV)-generated electricity. Moreover, ultrathin bifacial …

Hole current impedance and electron current enhancement by back-contact barriers in CdTe thin film solar cells

J Pan, M Gloeckler, JR Sites - Journal of applied physics, 2006 - pubs.aip.org
The combined effects of a significant back-contact barrier and a low absorber carrier density
frequently alter the current-voltage (JV) characteristics of CdTe solar cells. This combination …

Back contact formation in thin cadmium telluride solar cells

M Hädrich, C Heisler, U Reislöhner, C Kraft, H Metzner - Thin Solid Films, 2011 - Elsevier
We present a model describing the undesired roll-over which is a well-known phenomenon
in the current–voltage characteristics of CdTe solar cells. Therein, the roll-over is ascribed to …