We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics
have been measured in 4H–SiC diodes with a 10kV blocking voltage (100μm base width) …

The IV characteristics of high-voltage 4 H-SiC diodes with a Schottky barrier∼ 1.1 eV in
height are measured and analyzed. The forward IV characteristics proved to be close to …

A computer simulation has been carried out to analyze and explain the specific features of
the switch-on process in super-high-voltage (18 kV class) optically triggered 4H-SiC …

Low frequency noise has been studied in forward biased 4 H‐Si C p+‐n diodes at current
densities from 10− 4 to 10 A∕ cm 2⁠. At small current densities j⩽ 10− 3 A∕ cm 2⁠, the …

This study is focused on the design and fabrication of large-area (4.1 x4. 1 mm2 and 8.2 x8.
2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and gate fingers of Thyristors were …

Novel method of boron diffusion at low temperatures between 1150 and 1300° C is used for
the formation of both p‐i SiC junction and i‐region in one technological process. As the …

The charge collection efficiency (CCE) of SiC-detectors preliminarily irradiated with 8MeV
protons at a fluence of 1014cm− 2 was investigated. Nuclear spectrometric techniques were …

We employ a simple analytical model of superfast impact ionization front in a reversely
biased p+-n-n+ structure to evaluate the performance of prospective 4 H-SiC closing …