Atomic layer deposition (ALD) is a vapor phase technique capable of producing a variety of
materials. It consists of the alternation of separate self-limiting surface reactions, which …

In this work, we have quantitatively elucidated the source of the hydrogen content in the
atomic layer deposition of Al2O3 at different temperatures (80–220° C), by replacing the …

Fast spatial atomic layer deposition of Al2O3 at low temperature (<100 C) as a gas permeation
barrier for flexible organic light-emitting diode displays | Journal of Vacuum Science & …

The Al2O3 thin films deposition through conventional ALD systems is a well-established
process. The process under low temperatures has been studied by few research groups. In …

Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced
atomic layer deposition at 70° C. Trimethylaluminum was used as organometallic precursor …

Abstract Al 2 O 3/MgF 2 bilayer antireflection film was deposited on the glass with magnetron
sputtering. The results indicate that the O: Al ratio of Al 2 O 3 films varied between 1.92: 1 …

The conventional atomic layer deposition (ALD) technologies are capable of fabricating
supreme quality thin films of a wide variety of materials, but sequential introduction and …

There has been great research interest for memristors worldwide as it has many potential
applications. Resistive memories based on metal oxide thin films have been extensively …

This article is a literature review related to the methods of functionalization of carbon fibers
for tissue engineering applications. Through physical modification, it is possible to obtain a …

In this study, nanoscale-thickness Al 2 O 3 layers for moisture barrier films were developed
by a spatially resolved remote plasma atomic layer deposition process. The effect of various …