Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The Auger recombination coefficient in quasi-bulk In x Ga 1− x N (x∼ 9%–15%) layers
grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in …

This work discusses the temperature behavior of the various photoluminescence (PL)
transitions observed in undoped, n-and p-doped GaN in the 9–300 K range. Samples grown …

Wurtzite GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam
epitaxy on Si (111) and c-sapphire substrates. The nanocolumns density and diameter (600 …

A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire
substrates by metal–organic vapour phase epitaxy is developed. This approach, based on in …

This study investigates the impact of Mg doping concentration in GaN thin films on their
physical and mechanical properties, specifically on their conductivity transition …

In this work, we present a novel growth method to obtain high structural quality GaN films on
sapphire by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE). Our purpose is …

We demonstrate the nucleation of self-assembled, epitaxial GaN nanowires (NWs) on (111)
single-crystalline diamond without using a catalyst or buffer layer. The NWs show an …

We report on the selective area growth of semipolar (11-22) GaN epilayers on wet etched r-
plane patterned sapphire substrates (PSS) by metal organic chemical vapor deposition …