Influencing factors of GaN growth uniformity through orthogonal test analysis
Gallium nitride (GaN) is widely used in light-emitting diode (LED) devices due to its wide
bandgap and excellently optoelectronic performance. The efficiency and lifetime of LEDs are …
bandgap and excellently optoelectronic performance. The efficiency and lifetime of LEDs are …
Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor
CF Tseng, TY Tsai, YH Huang, MT Lee… - Journal of Crystal …, 2015 - Elsevier
In this study a numerical simulation was carried out to analyze the transport phenomena in a
vertical type metal organic chemical vapor deposition (MOCVD) reactor for Gallium Nitride …
vertical type metal organic chemical vapor deposition (MOCVD) reactor for Gallium Nitride …
Study on the uniformity of ZnO films grown by MOCVD
J Li, J Wang, Y Pei, G Wang - Ceramics International, 2019 - Elsevier
This study reports the use of CFD simulation software to simulate the growth process in a
ZnO-MOCVD reaction chamber. The results of the rate of ZnO deposition in the simulation …
ZnO-MOCVD reaction chamber. The results of the rate of ZnO deposition in the simulation …
[图书][B] МОС-гидридная эпитаксия в технологии материалов фотоники и электроники
Р Акчурин, А Мармалюк - 2022 - books.google.com
В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …
Silicon epitaxial growth process using trichlorosilane gas in a single-wafer high-speed substrate rotation reactor
H Habuka, JP Suzuki, Y Takai, H Hirata… - Journal of crystal growth, 2011 - Elsevier
A silicon epitaxial growth process in a trichlorosilane–hydrogen system using a single-wafer
high-speed substrate rotation reactor was studied by means of experiments and numerical …
high-speed substrate rotation reactor was studied by means of experiments and numerical …
[HTML][HTML] Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor
B Yang, N Yang, D Zhao, F Chen, X Yuan, Y Hou… - Coatings, 2023 - mdpi.com
The process of graphene growth by CVD involves a series of complex gas-phase surface
chemical reactions, which generally go through three processes, including gas phase …
chemical reactions, which generally go through three processes, including gas phase …
Stability and process parameter optimization for a vertical rotating ZnO-MOCVD reaction chamber
J Li, Y Xu, X Ma, B Fan, G Wang - Vacuum, 2018 - Elsevier
Developing an understanding of the cavity stability underlying the metalorganic chemical
vapor deposition (MOCVD) of ZnO is critical to the fabrication of oxide-based devices …
vapor deposition (MOCVD) of ZnO is critical to the fabrication of oxide-based devices …
Modeling analysis of the MOCVD growth of ZnO film
The fluid dynamics of a vertical metal-organic chemical vapor deposition (MOCVD) reactor
for the growth of ZnO film have been studied. The relevant transport equations were solved …
for the growth of ZnO film have been studied. The relevant transport equations were solved …
Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test
C Li, C Li, H Jiang, H Chen… - Crystal Research and …, 2024 - Wiley Online Library
Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high‐
quality films of silicon. This technique is widely used in the production of integrated circuits …
quality films of silicon. This technique is widely used in the production of integrated circuits …
[HTML][HTML] 噴流式MOCVD 入口導流設計之熱流與質傳分析
WC Hung - 2017 - ir.lib.ncu.edu.tw
摘要(中) 半導體薄膜製造一直為全世界製造研究熱點, 金屬有機化學氣相沉積法(MOCVD)
因具有製造良好均勻度大尺寸薄膜的能力, 且兼具高純度, 材料變化高等靈活性, 為現今LED …
因具有製造良好均勻度大尺寸薄膜的能力, 且兼具高純度, 材料變化高等靈活性, 為現今LED …