Ion bombardment often leads to compositional changes in the surface layers of
multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP …

AES was used to determine the surface composition of InP bombarded with 0.5 to 5 keV Ar+
ions. The (100),(110) and some vicinal planes were sputtered. On all of these surfaces the …

This paper is devoted to the interpretation of the results obtained by AES, EPES and EELS
on InP (100). Accurate characterizations of the preparation of the substrates are given …

The cleaning and etching of the InP (100) surface by chlorine gas is investigated using
synchrotron-radiation photoemission spectroscopy. A clean InP surface with a 4× 2 …

Phosphorus, mainly in the form of P 2, has been evaporated on a InP (100) sample in order
to compensate P vacancies and to remove metallic In clusters from the surface. These …

k-resolved inverse photoemission (h ̵ ω= 9.9 eV) spectra were taken from (4× 2)
reconstructed non-ideal InP (100) surfaces prepared by sputter annealing at very low ion …

We report the first direct measurement of surface interatomic bond distance modifications
due to ion bombardment. The experiments were performed using low energy Ar+ ion on a …

The goal of this research is to highlight the effectiveness of associating the spectroscopic
methods EELS and EPES in the study of thin film grown on substrates. We use the great …

The aim of the present study is to demonstrate the feasibility to form well-ordered nanoholes
on InP (100) surfaces by low Ar+ ion sputtering process in UHV conditions from anodized …

We use ab initio total-energy minimization methods to study the equilibrium structure of the
InP (100) surface, and in particular examine the structure of the surface as a function of In …