This letter reports the avalanche and surge current ruggedness of the industry's first 1.2-kV-
class vertical GaN pn diodes fabricated on 100-mm GaN substrates. The 1.2-kV vertical GaN …

The need for power semiconductor devices with high-voltage, high-frequency, and high-
temperature operation capability is growing, especially for advanced power conversion and …

We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

High-voltage p-channel 4H-SiC insulated gate bipolar transistors (IGBTs) have been
fabricated and characterized. The devices have a forward voltage drop of 7.2 V at 100 A/cm …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

A novel MOS-controlled silicon carbide (SiC) thyristor device, the SiC emitter turn-off thyristor
(ETO), as a promising technology for future high-voltage and high-frequency switching …

Steady-state and transient characteristics of 10 kV 4H-SiC diodes have been measured in
the temperature interval from 293 to 514 K. The results obtained demonstrate a high level of …

An electronic circuit for making accurate open-circuit voltage decay measurements is
presented. The circuit overcomes the main limitations that occur in the standard method …

Современная цивилизация нуждается во все более потребляемых источниках энергии,
чтобы поддерживать прогресс в обществе. Атомная энергия и преобразование …

High-voltage 4 H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors,
and thyristors are discussed. The results of experimental and theoretical studies of the …