Atomic layer deposition for nanomaterial synthesis and functionalization in energy technology
Atomic layer deposition (ALD) has been receiving more and more research attention in the
past few decades, ascribed to its unrivaled capabilities in controlling material growth with …
past few decades, ascribed to its unrivaled capabilities in controlling material growth with …
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p–n junction
by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p–n …
by partially stacking 2D h-BN as a mask to p-dope MoS2. The fabricated lateral MoS2 p–n …
Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for
photodetection over a wide range of visible wavelengths. Photodetection is generally …
photodetection over a wide range of visible wavelengths. Photodetection is generally …
Synthesis of ZnO nanorods on a silicon substrate via hydrothermal route for optoelectronic applications
AD Faisal, RA Ismail, WK Khalef, ET Salim - Optical and Quantum …, 2020 - Springer
In the present work, we have synthesized ZnO nanorods (ZnO NRs) by using hydrothermal
technique. The morphological, structural and optical properties of ZnO NRs were …
technique. The morphological, structural and optical properties of ZnO NRs were …
A photodetector based on p-Si/n-ZnO nanotube heterojunctions with high ultraviolet responsivity
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …
visible and infrared photodetectors are needed for commercial applications. n-Type ZnO …
SnO2/ZnO/p-Si and SnO2/TiO2/p-Si heterojunction UV photodiodes prepared using a hydrothermal method
K Ozel, A Yildiz - Sensors and Actuators A: Physical, 2020 - Elsevier
Low dimensional nanostructures (NSs) exhibit superior properties for the fabrication of
electronic and optoelectronic devices. The integration of these structures into the …
electronic and optoelectronic devices. The integration of these structures into the …
Phase-transition modulated, high-performance dual-mode photodetectors based on WSe2/VO2 heterojunctions
H Luo, B Wang, E Wang, X Wang, Y Sun, Q Li… - Applied Physics …, 2019 - pubs.aip.org
Photodetectors based on two-dimensional (2D) transition metal dichalcogenides (TMDs)
can only be operated in a single photovoltaic or photoconductive mode, showing either high …
can only be operated in a single photovoltaic or photoconductive mode, showing either high …
Improved optical and electrical properties of Fe doped ZnO nanostructures facilely deposited by low-cost SILAR method for photosensor applications
SL Jenish, S Valanarasu, B Prakash… - Surfaces and …, 2022 - Elsevier
The method of successive ionic layer adsorption and reaction (SILAR) was used to make Fe
doped ZnO thin films by varying Fe concentrations (0, 2, 4, 6, and 8%). The prepared films …
doped ZnO thin films by varying Fe concentrations (0, 2, 4, 6, and 8%). The prepared films …
Performance analysis of RF-sputtered ZnO/Si heterojunction UV photodetectors with high photo-responsivity
In this paper, structural, electrical and ultraviolet photodetection parameters of RF sputtered-
ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare …
ZnO/Si heterojunction diodes are analyzed. In this work, ZnO thin film was deposited on bare …
Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study
This paper reports a comparative study of the ultraviolet (UV) detection properties of n-TiO
2/p-Si heterojunction devices fabricated using two different deposition techniques namely …
2/p-Si heterojunction devices fabricated using two different deposition techniques namely …