Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

The figure of merit (FOM) of a semiconductor device represents an important quality as it
pertains to its performance limits and is often used to drive the technology development in a …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Low boron doped homoepitaxial diamond layers were grown on Ib (100) diamond
substrates with oxygen added to the gas mixture. The acceptor density of the samples has …

Power electronics switching devices made on wide-bandgap (WBG) semiconductors are
known to have the potential to make a transformative impact on 21st century energy …

The Z 1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier
lifetime—has been investigated. Using capacitance versus voltage (CV) measurements and …

In this work, we investigate the degree of incomplete ionization of Al doped 4H-SiC. In
particular, we perform analysis on a comprehensive list of published measurements of …

A diamond Schottky pin diode (SPIND) with the highest reported current density to date of~
116 kA/cm 2 is demonstrated, carrying a total current of~ 1.32 A through a wide pseudo …

Silicon carbide (SiC) n-channel and p-channel junction field-effect transistors (JFETs) were
fabricated by direct ion implantation into a high-purity semi-insulating 4H-SiC substrate …

The minimum specific on-resistance of 4H-SiC {0001} unipolar devices as a function of the
breakdown voltage was updated based on latest studies on intrinsic physical properties …