We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …
Potentialities of density functional theory (DFT) based methodologies are explored for photovoltaic materials through the modeling of the structural and optoelectronic properties of …
In this paper, we present a comprehensive study of high efficiencies tandem solar cells monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs (N) …
Hydrogen produced using artificial photosynthesis, ie solar splitting of water, is a promising energy alternative to fossil fuels. Efficient solar water splitting demands a suitable band gap …
The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) …
We have investigated quantitatively anti-phase domains (APD) structural properties in 20nm GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …
We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous …
Band structure calculations of strained Ga (NAsP) quantum wells are performed within the framework of the extended-basis sp 3 d 5 s* tight-binding model. The nitrogen contribution is …
The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥ 0.6) is studied experimentally using optical absorption, photomodulated transmission …