Understanding quantum confinement of charge carriers in layered 2D hybrid perovskites

J Even, L Pedesseau, C Katan - ChemPhysChem, 2014 - Wiley Online Library
Layered hybrid organic perovskites (HOPs) structures are a class of low‐cost two‐
dimensional materials that exhibit outstanding optical properties, related to dielectric and …

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

S Almosni, C Robert, T Nguyen Thanh… - Journal of applied …, 2013 - pubs.aip.org
We compare the potentiality of bulk InGaPN and GaAsPN materials quasi-lattice-matched to
silicon (Si), for multi-junction solar cells application. Bandgaps of both bulk alloys are first …

Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic‐Inorganic Perovskites and III/V Heterostructures

J Even, L Pedesseau, E Tea, S Almosni… - International Journal …, 2014 - Wiley Online Library
Potentialities of density functional theory (DFT) based methodologies are explored for
photovoltaic materials through the modeling of the structural and optoelectronic properties of …

Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

A Rolland, L Pedesseau, J Even, S Almosni… - Optical and Quantum …, 2014 - Springer
In this paper, we present a comprehensive study of high efficiencies tandem solar cells
monolithically grown on a silicon substrate using GaAsPN absorber layer. InGaAs (N) …

Photoelectrochemical water oxidation of GaP 1− x Sb x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting

M Alqahtani, S Sathasivam, L Chen… - Sustainable Energy & …, 2019 - pubs.rsc.org
Hydrogen produced using artificial photosynthesis, ie solar splitting of water, is a promising
energy alternative to fossil fuels. Efficient solar water splitting demands a suitable band gap …

Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells

S Ilahi, S Almosni, F Chouchane, M Perrin… - Solar Energy Materials …, 2015 - Elsevier
The optical absorption and thermal conductivity of GaAsPN absorbers are investigated by
means of optical absorption spectroscopy and photo-thermal deflection spectroscopy (PDS) …

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

W Guo, A Bondi, C Cornet, A Létoublon, O Durand… - Applied Surface …, 2012 - Elsevier
We have investigated quantitatively anti-phase domains (APD) structural properties in 20nm
GaP/Si epilayers grown by molecular beam epitaxy, using fast, robust and non-destructive …

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Y Ping Wang, J Stodolna, M Bahri, J Kuyyalil… - Applied Physics …, 2015 - pubs.aip.org
We evidence the influence of the quality of the starting Si surface on the III-V/Si interface
abruptness and on the formation of defects during the growth of III-V/Si heterogeneous …

Atomistic calculations of Ga (NAsP)/GaP (N) quantum wells on silicon substrate: band structure and optical gain

C Robert, M Perrin, C Cornet, J Even… - Applied Physics …, 2012 - pubs.aip.org
Band structure calculations of strained Ga (NAsP) quantum wells are performed within the
framework of the extended-basis sp 3 d 5 s* tight-binding model. The nitrogen contribution is …

Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys

K Zelazna, M Gladysiewicz, MP Polak, S Almosni… - Scientific reports, 2017 - nature.com
The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …