Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Reflectance-difference spectroscopy (RDS) is employed to study in situ the (4× 2),(1× 6),(4×
6),(3× 1),(2× 4)-α,(2× 4)-β,(2× 4)-γ, c (4× 4), and d (4× 4) reconstructions of (001) GaAs …

Recent photoemission results on the electronic structure of clean, reconstructed Si (111) and
Si (100) surfaces are reviewed. Changes in the electronic and atomic structure induced by …

A scanning tunneling microscope combined with a field ion microscope, which we call “FI-
STM” has been constructed and tested successfully. The details of the principles and …

The formation of the rectifying Schottky barrier on metal-semiconductor interfaces is one of
the longest standing problems of solid-state physics. We present a review of the models and …

Abstract The interface K/Si (100) 2× 1 has been investigated by using a variety of surface
techniques sensitive to both structural and electronic properties. The adsorption site of …

We present an investigation of the structural properties, atomic structure, adsorbate mode of
growth, and interface formation of the room-temperature K/Si (100) 2× 1 system by a …

The absolute coverage of K on the Si (111)-3× 1-K surface which was prepared by
deposition of K on the 420 C Si substrate was determined, by using coaxial impact-collision …

Scanning tunnelling microscopy (STM) has been used to investigate the structures formed
by a low coverage (< 0.01 ML) of Na on reduced 1× 1 surfaces of TiO2 (110). The STM …

The initial stages and surface structures of the (3× 2) phase of Ba adsorption on an Si (100)-
2× 1 surface held at 900° C have been studied by low-energy electron diffraction, Auger …