Understanding disorder in silicon quantum computing platforms: scattering mechanisms in Si/SiGe quantum wells
Y Huang, S Das Sarma - Physical Review B, 2024 - APS
Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron
mobility and large valley splitting [Paquelet Wuetz, Nat. Commun. 14, 1385 (2023) 2041 …
mobility and large valley splitting [Paquelet Wuetz, Nat. Commun. 14, 1385 (2023) 2041 …
Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs)
formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting …
formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting …
Materials and device simulations for silicon qubit design and optimization
Silicon-based microelectronics technology is extremely mature, yet this profoundly important
material is now also poised to become a foundation for quantum information processing …
material is now also poised to become a foundation for quantum information processing …
Strain effects on rashba spin‐orbit coupling of 2D hole gases in GeSn/Ge heterostructures
A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20
000 cm2 V− 1 s− 1 is given. Both the Shubnikov–de Haas oscillations and integer quantum …
000 cm2 V− 1 s− 1 is given. Both the Shubnikov–de Haas oscillations and integer quantum …
Two-dimensional system of strongly interacting electrons in silicon (100) structures
VT Dolgopolov - Physics-Uspekhi, 2019 - iopscience.iop.org
Studies of various experimental groups that explore the properties of a two-dimensional
electron gas in silicon semiconductor systems ((100) Si-MOSFET and (100) SiGe/Si/SiGe …
electron gas in silicon semiconductor systems ((100) Si-MOSFET and (100) SiGe/Si/SiGe …
Density-dependent two-dimensional optimal mobility in ultra-high-quality semiconductor quantum wells
S Ahn, S Das Sarma - Physical Review Materials, 2022 - APS
We calculate using the Boltzmann transport theory the density-dependent mobility of two-
dimensional (2D) electrons in GaAs, SiGe, and AlAs quantum wells as well as of 2D holes in …
dimensional (2D) electrons in GaAs, SiGe, and AlAs quantum wells as well as of 2D holes in …
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
We investigate the effect of surface tunneling on charge distributions of two-dimensional
hole gases (2DHGs) in undoped Ge/GeSi heterostructures. As in the electron channel case …
hole gases (2DHGs) in undoped Ge/GeSi heterostructures. As in the electron channel case …
[HTML][HTML] Scattering mechanisms in shallow undoped Si/SiGe quantum wells
We report the magneto-transport study and scattering mechanism analysis of a series of
increasingly shallow Si/SiGe quantum wells with depth ranging from∼ 100 nm to∼ 10 nm …
increasingly shallow Si/SiGe quantum wells with depth ranging from∼ 100 nm to∼ 10 nm …
Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
MY Melnikov, AA Shashkin, VT Dolgopolov… - Applied Physics …, 2015 - pubs.aip.org
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum
mobility up to 240 m 2/Vs, which is noticeably higher than previously reported results in …
mobility up to 240 m 2/Vs, which is noticeably higher than previously reported results in …
Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition
Both depletion-mode and enhancement-mode two-dimensional electron gases (2DEGs) in
isotopically enriched 28 Si with extremely high mobility (522 000 cm 2/V s) are presented …
isotopically enriched 28 Si with extremely high mobility (522 000 cm 2/V s) are presented …