Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices
C Medina-Bailon, JL Padilla, T Sadi… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Leakage phenomena are increasingly affecting the performance of nanoelectronic devices,
and therefore, advanced device simulators need to include them in an appropriate way. This …
and therefore, advanced device simulators need to include them in an appropriate way. This …
3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction
FM Bufler, L Smith - Journal of Computational Electronics, 2013 - Springer
The performance of FinFET and FDSOI devices is compared by 3D Monte Carlo simulation
using an enhanced quantum correction scheme. This scheme has two new features:(i) the …
using an enhanced quantum correction scheme. This scheme has two new features:(i) the …
A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs
H Ryu - Nanoscale Research Letters, 2016 - Springer
Dominance of various scattering mechanisms in determination of the carrier mobility is
examined for silicon (Si) nanowires of sub-10-nm cross-sections. With a focus on p-type …
examined for silicon (Si) nanowires of sub-10-nm cross-sections. With a focus on p-type …
On the extension of ET-FDSOI roadmap for 22 nm node and beyond
With the current scenario of different candidates to lead the road to 14 nm node and beyond,
this work presents a thorough Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the …
this work presents a thorough Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the …
MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections
C Medina-Bailon, C Sampedro… - … Integration on Silicon …, 2018 - ieeexplore.ieee.org
As electronic devices approach the nanometer scale, quantum transport theories have been
recognized as the best option to reproduce their performance. Other possible trend, mainly …
recognized as the best option to reproduce their performance. Other possible trend, mainly …
Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs
In this paper, we present an analytical semiempirical model of the profile of the channel
charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is …
charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is …
Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization
This work presents a thorough study of the impact of different Buried OXide (BOX)
configurations on the scaling of extremely thin SOI devices (ET-FDSOI, also known as …
configurations on the scaling of extremely thin SOI devices (ET-FDSOI, also known as …
Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
With the 32nm node in mass production, simulation tools have to include quantum effects to
correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo …
correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo …
Implementation of band-to-band tunneling phenomena in a multisubband ensemble Monte Carlo simulator: application to silicon TFETs
C Medina-Bailon, JL Padilla… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Tunnel FETs (TFETs) are in the way to become an alternative to conventional MOSFETs due
to the possibility of achieving low subthreshold swing combined with small OFF current …
to the possibility of achieving low subthreshold swing combined with small OFF current …
[HTML][HTML] A parallel deterministic solver for the Schrödinger–Poisson–Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo
We present a parallel deterministic solver for the Boltzmann–Schrödinger–Poisson system
for partially-confined DG-MOSFETs. Our 2D model uses a dimensional coupling: the …
for partially-confined DG-MOSFETs. Our 2D model uses a dimensional coupling: the …