Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor
This paper investigates symmetrical design of a Junctionless Nanowire Tunnel-Field-Effect-
Transistor (JL-NWTFET) for highly sensitive biosensor. JL-NWTFET deployed using Gate-All …
Transistor (JL-NWTFET) for highly sensitive biosensor. JL-NWTFET deployed using Gate-All …
Impact of temperature variation on noise parameters and HCI degradation of Recessed Source/Drain Junctionless Gate All Around MOSFETs
With the continuous scaling for MOS device, the noise parameters has becoming a critical
parameter. The noise performance of an electronic device can be measured with the help of …
parameter. The noise performance of an electronic device can be measured with the help of …
Impact on performance of dual stack hetero-gated dielectric modulated TFET biosensor due to Si1-xGex pocket variation
In this work, the performance evaluation of a dual stack hetero-gated pocket modulated
tunnel FET (DSHGPM-TFET) based biosensor is presented. In the proposed device, cavity is …
tunnel FET (DSHGPM-TFET) based biosensor is presented. In the proposed device, cavity is …
Performance analysis of short channel effects immune JLFET with enhanced drive current
This manuscript reports analog/RF and noise analysis of a novel junctionless field effect
transistor. To reduce the gate induced drain leakage (GIDL), step‐gate‐oxide structure is …
transistor. To reduce the gate induced drain leakage (GIDL), step‐gate‐oxide structure is …
Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications
In this article, a GaSb/Si/SiGe heterojunction vertical nanowire (V-NW) junctionless field-
effect transistors (JFETs) under the influence of elevated temperature have been …
effect transistors (JFETs) under the influence of elevated temperature have been …
Recessed-Source/Drain Junctionless GAA MOSFETs and their Sensitivity to Temperature: A Machine learning based Analysis
This article compares the performance of Recessed-Source/Drain Junction less Gate All
Around (Re-S/D-JL-GAA) MOSFETs to Junction less Gate All Around (JL-GAA) MOSFETs …
Around (Re-S/D-JL-GAA) MOSFETs to Junction less Gate All Around (JL-GAA) MOSFETs …
Parameteric optimization of SiGe S/D NT JLFET using analytical modeling to improve L‐BTBT induced GIDL
In the present work, we investigate the impact of structure dimensional parameters on the
short channel effects which occurs especially below 20 nm regime particularly gate induced …
short channel effects which occurs especially below 20 nm regime particularly gate induced …
Temperature Performance Analysis of Hybrid Junctionless Double Gate Transistor.
S BHARTI, R DHIMAN… - Journal of Active & …, 2024 - search.ebscohost.com
In this script temperature analysis on a Hybrid double gate Junctionless transistor with gate
engineering has been investigated to improve short-channel effects and gate controllability …
engineering has been investigated to improve short-channel effects and gate controllability …
Performance Investigations of Novel Hybrid Junctionless Double Gate Transistor with Gate Engineering.
S BHARTI, R DHIMAN… - Journal of Active & …, 2024 - search.ebscohost.com
A novel hybrid double gate junctionless transistor with gate engineering using a dual gate
oxide stack has been proposed to improve short-channel effects and gate controllability for …
oxide stack has been proposed to improve short-channel effects and gate controllability for …