Abstract n-Mg 2 Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped
(n= 3× 10 17 cm− 3) silicide epitaxial layer on p-Si (1 1 1)(p= 5× 10 14 cm− 3) was grown by …

We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown
Mg2Si single-crystalline substrates (electron concentration= 2× 1015cm− 3) to investigate …

In the present advanced information society, the group IV element Si is inevitably used for
various high-performance devices, such as transistors and solar cells. When Si meets group …

Mg 2 Si is a potential thermoelectric (TE) material that can directly convert waste energy into
electricity. In expectation of improving its TE performance by increasing electron carrier …

In this work, Al alloys with 6.6%, 10.4%, and 14.6% Si were deposited as thick coatings by
Friction Surfacing (FS), resulting in grain refinement and spheroidization of needle-shaped …

Polycrystalline magnesium silicide, Mg2Si and magnesium germanide, Mg2Ge were
synthesised from the elemental powders via the microwave-induced-metal-plasma (MIMP) …

A novel Si (p)/Mg 2 Si (i)/Si (n) PV cell architecture is proposed on the basis of numerical
simulation and ab intio calculation in the framework of the density functional theory (DFT) …

N-type Mg 2 Si single crystal ingot has been successfully grown by the Vertical Bridgman
technique. The Hall Effect measurement at RT revealed a moderate Hall mobility (~ 446 cm …

For the full benefit of the silicon chip industry and to further extend the photoresponse cut-off
wavelength of the current Si photodetectors beyond 1100 nm, high-performance silicon …

Abstract The Al/Mg ${} _ {2} $ Si/p-Si Schottky diode was fabricated using spin coating. The
real ($\varepsilon $$\mathrm {\prime} $) and imaginary ($\varepsilon $$\mathrm {\prime} …