Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

This perspective provides an overview of early developments, current status, and remaining
challenges of microLED (lLED) technology, which was first reported in Applied Physics …

This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

Carrier-lifetime measurements reveal that, contrary to common expectations, the high-
current nonradiative recombination (droop) in III-nitride light emitters is comprised of two …

III-Nitride micro-LEDs are promising building blocks for the next generation of high
performance microdisplays. To reach a high pixel density, it is desired to achieve micro …

Crystallographic point defects (PDs) can dramatically decrease the efficiency of
optoelectronic semiconductor devices, many of which are based on quantum well (QW) …

Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …