Accelerated insulation aging due to fast, repetitive voltages: A review identifying challenges and future research needs

M Ghassemi - IEEE Transactions on Dielectrics and Electrical …, 2019 - ieeexplore.ieee.org
Although the adverse effects of using power electronic conversion on the insulation systems
used in different apparatuses have been investigated, they are limited to low slew rates and …

A combined solution of thermoelectric coolers and microchannels for multi-chip heat dissipation with precise temperature uniformity control

B Cong, Y Kong, Y Ye, R Liu, X Du, L Yu, S Jia… - Applied Thermal …, 2023 - Elsevier
Effective thermal management with precise temperature uniformity is necessary to improve
the performance and stability of multi-chip devices such as active phased array antennas …

[图书][B] Electrical machines and drives: fundamentals and advanced modelling

AJ Melkebeek - 2018 - Springer
This work can be used as a comprehensive study and reference textbook on the most
common electrical machines and drives. In contrast with many textbooks on drives, this book …

Characterization of PDIV, PDEV, and RPDIV in insulated wires under unipolar repetitive square wave excitations for inverter-fed motors

H Naderiallaf, P Giangrande, M Galea - IEEE Access, 2023 - ieeexplore.ieee.org
The behaviour of partial discharge inception voltage (PDIV), partial discharge extinction
voltage (PDEV) and repetitive partial discharge inception voltage (RPDIV) as a function of …

Junction temperature measurement method for SiC bipolar junction transistor using base–collector voltage drop at low current

B Shi, S Feng, Y Zhang, K Bai, Y Xiao… - … on Power Electronics, 2019 - ieeexplore.ieee.org
This paper proposes an electrical method for estimation of the vertical junction temperature
of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based …

[图书][B] SiGe based re-engineering of electronic warfare subsystems

W Lambrechts, S Sinha, W Lambrechts, S Sinha - 2017 - Springer
Electronic warfare (EW) uses focused electromagnetic (EM) energy, also known as directed
energy (DE), such as radio waves, infrared (IR), radio detection and ranging (radar) or light …

Multiphysics characterization of a novel SiC power module

Y Zhang, HP Nee, T Hammam, I Belov… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
This paper proposes a novel power module concept specially designed for highly reliable
silicon carbide (SiC) power devices for medium-and high-power applications. The concept …

Development of a high-temperature gate drive and protection circuit using discrete components

F Qi, L Xu - IEEE Transactions on Power Electronics, 2016 - ieeexplore.ieee.org
This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-
Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete …

The impact of temperature and switching rate on dynamic transients of high-voltage silicon and 4H-SiC NPN BJTs: A technology evaluation

S Jahdi, M Hedayati, BH Stark… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper reports the application of silicon bipolar junction transistor (BJT) modeling
techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the …

An improved SPICE model of SiC BJT incorporating surface recombination effect

J Wang, S Liang, L Deng, X Yin… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The SiC bipolar junction transistor (BJT) offers an attractive alternative to the more popular
SiC mosfet. It is important to develop an accurate SPICE model for the SiC BJT to enable its …