On current technology for light absorber materials used in highly efficient industrial solar cells

AKW Chee - Renewable and Sustainable Energy Reviews, 2023 - Elsevier
The renewable power industry is currently experiencing a rapid growth led by photovoltaic
systems because of advances in materials science and cost reductions in processing …

The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique

I Orak, A Kocyigit, A Turut - Journal of Alloys and Compounds, 2017 - Elsevier
The ZnO layer onto n-Si has been formed by atomic layer deposition technique. A final film
thickness of 10 nm has been obtained by the resulting ZnO film growth rate of about 1.45 Å …

The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

A Karabulut, İ Orak, A Türüt - Solid-State Electronics, 2018 - Elsevier
In present work, photocurrent, current-voltage (IV) and capacitance/conductance-voltage-
frequency (C/GVf) measurements were analyzed for the photodiode and diode parameters …

Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures

A Kılçık, N Berk, H Seymen, Ş Karataş - Journal of Materials Science …, 2021 - Springer
We investigated results of light intensity on electrical characteristics of Au/Graphene Oxide
(GO)/n–Si junction structures in dark and under different light intensities at 300 K (absolute …

The Au/Cu2WSe4/p-Si photodiode: electrical and morphological characterization

A Kocyigit, M Yıldırım, A Sarılmaz, F Ozel - Journal of Alloys and …, 2019 - Elsevier
Cu 2 WSe 4 nanosheets were synthesized by the hot-injection method and put as interfacial
layers between Au metal and p-Si by spin coating technique to investigate their …

The structural and electrical characterization of Al/GO-SiO2/p-Si photodiode

A Kocyigit, İ Karteri, I Orak, S Uruş, M Çaylar - Physica E: Low-dimensional …, 2018 - Elsevier
GO-SiO 2 composite structures were synthesized chemically and characterized by FTIR,
XRD, TGA and SEM. The characterization results highlighted that the composite of the GO …

Poly (melamine-co-formaldehyde) methylated effect on the interface states of metal/polymer/p-Si Schottky barrier diode

C Tozlu, A Mutlu - Synthetic Metals, 2016 - Elsevier
The deposition technique and interface effect of polymeric molecules onto silicon surface is
crucial topic for organic/inorganic hybrid technologies. In this study, the chemical structure of …

Electrical and photoresponse properties of Al/graphene oxide doped NiO nanocomposite/p-Si/Al photodiodes

NM Khusayfan - Journal of Alloys and Compounds, 2016 - Elsevier
The electrical and photoconducting properties of Al/graphene oxide doped NiO
nanocomposite/p-Si/Al photodiodes with various graphene oxide contents were investigated …

Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes

A Tataroğlu, Ş Altındal… - Journal of Materials …, 2020 - Springer
The cobalt sulfate-polyvinylpyrrolidone (CoSO 4-PVP) solution was deposited on n-Si crystal
by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO 4 …

Structural, Optical, Electrical and Photoelectrical Properties of 2-Amino-4-(5-bromothiophen-2-yl)-5,6-dihydro-6-methyl-5-oxo-4H-pyrano[3,2-c] quinoline-3 …

AM Mansour, FMA El-Taweel… - Journal of Electronic …, 2017 - Springer
Amino-4-(5-bromothiophen-2-yl)-5, 6-dihydro-6-methyl-5-oxo-4 H-pyrano [3, 2-c] quinoline-3-
carbonitrile (ABDQC) powder was synthesized and showed thermal stability up to 535 K …