Model-based control methods do not produce satisfactory control results with the batch
process control of Czochralski (CZ) silicon monocrystalline with complex nonlinearity, large …

Czochralski (Cz) silicon single crystal growth process is a large delay, nonlinear dynamic
time-varying system with complex physicochemical reactions, multi-field and multi-phase …

This paper proposes a alternate physics-informed neural network (PINN) with a two-stage
training strategy to solve the thermoelastic coupling in the growth of Czochralski silicon …

Discussion Given the inherent complexity of the simulations previously discussed, the
validity of the models in question remains a significant concern. The multitude of …

On the occasion of the centennial of the invention of the Czochralski crystal growth process
by the Polish scientist Jan Czochralski, a review of selected strategies for the automatic …

The Czochralski (CZ) process is one of the most important techniques for the production of
bulk single crystals. Various numerical models for CZ growth furnaces exist, however, a …

We conducted the transient global simulations for the crystal pulling process of Czochralski
silicon (CZ-Si) growth with the cusp-shaped magnetic field (CMF). The generation, transport …

A transient global model for the crystal pulling process was developed for magnetic-field-
applied Czochralski silicon (CZ-Si) growth. Heat transfer by solid conduction, melt …

Herein, facets and related phenomena are studied for silicon crystals grown in the< 100>
and< 111> directions, using the Zone Melting and Floating Zone techniques. Investigating …

A set of two-dimensional numerical simulations of the Czochralski growth of germanium
crystals were performed in order to study the effect of the crystal pulling rate and …