Electronic noise has its roots in the fundamental physical interactions between matter and
charged particles, carrying information about the phenomena that occur at the microscopic …

The electromigration (EM) activation energy (EA) of alternative metals, such as Ru and Co,
was obtained using low-frequency noise (LFN) measurements. High activation energies …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

1.8-MeV proton irradiation to a fluence of 10 14/cm 2 does not significantly affect the
resistance or low-frequency noise of copper or ruthenium resistors fabricated via modern …

A new electromigration (EM) test method, based on low-frequency noise (LFN)
measurements is demonstrated and validated for advanced nano-interconnects …

This paper demonstrates the deteriorating electromigration (EM) reliability of Cu
interconnects when scaling the metal pitch from 54 to 44nm. The study is carried out using a …

A model explaining Lorentzian low-frequency noise spectra observed in electronic
interconnects is presented. The model is based on the interaction of electrons with …

In this paper we discuss a new EM test methodology, based on low-frequency noise (LFN)
measurements. The main advantages of LFN over the standard accelerated EM tests are …

The output current fluctuations in metallic interconnects exhibit fluctuation scaling. The
temperature dependence of the scaling exponent is analyzed and found to increase up to a …