ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …

Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …

Compared to ZnO-based photoconductive photodetectors (PDs), photovoltaic PDs possess
the advantages of easy fabrication, low dark current, high response speed and possible self …

Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of
hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the …

For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

A memristive nonvolatile logic‐in‐memory circuit can provide a novel energy‐efficient
computing architecture for battery‐powered flexible electronics. However, the cell‐to‐cell …

With the rapid development of transparent integrated circuits, transistors with extremely low
subthreshold swing (SS) is becoming a necessary requirement. Here, we fabricated three …

Using x-ray photoemission spectroscopy (XPS) and current-voltage (IV) measurements of
Hg contacts we show that the surface electron accumulation layer of In 2 O 3 can be …

The rectifying performance of platinum, palladium, and iridium Schottky contacts on ZnO
(0001) surfaces was dramatically improved by their deliberate in-situ oxidation using an O 2 …

Highly rectifying Ag, Au, Pd, and Pt Schottky contacts have been fabricated on
heteroepitaxial pulsed-laser deposited ZnO-thin films by reactive sputtering. X-ray …