Comprehensive topological overview of rolling stock architectures and recent trends in electric railway traction systems
This paper reviews the modern electric propulsion architectures and configurations for
railway traction, which are currently in practice. The development and advancement of …
railway traction, which are currently in practice. The development and advancement of …
Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules
Y Wen, Y Yang, Y Gao - IEEE Transactions on power …, 2020 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
Review of packaging schemes for power module
F Hou, W Wang, L Cao, J Li, M Su, T Lin… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
SiC devices are promising for outperforming Si counterparts in high-frequency applications
due to its superior material properties. Conventional wirebonded packaging scheme has …
due to its superior material properties. Conventional wirebonded packaging scheme has …
Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …
capacity power converters. However, transient imbalance current, during turn-on and-off …
Practical design considerations for a Si IGBT+ SiC MOSFET hybrid switch: Parasitic interconnect influences, cost, and current ratio optimization
A Deshpande, F Luo - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
In this paper, a hybrid switch (HyS) consisting of a large current rated Si insulated-gate
bipolar transistor (IGBT) device connected in parallel with a small current rated SiC MOSFET …
bipolar transistor (IGBT) device connected in parallel with a small current rated SiC MOSFET …
A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …
various high voltage, high frequency and high power electronic applications. When …
Active gate driver for dynamic current balancing of parallel-connected SiC MOSFETs
In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfet s is
necessary to increase the current rating. However, the unbalanced dynamic current during …
necessary to increase the current rating. However, the unbalanced dynamic current during …
Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
of the power conversion systems. However, due to mismatched circuit parameters or …
Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs
MD Kelley, BN Pushpakaran… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic
design with improved efficiency as well as increased power density. High-voltage spikes …
design with improved efficiency as well as increased power density. High-voltage spikes …
Balancing of peak currents between paralleled SiC MOSFETs by drive-source resistors and coupled power-source inductors
Y Mao, Z Miao, CM Wang… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The peak currents between two paralleled SiC MOSFETs could differ significantly due to the
mismatch in threshold voltages V th. The method described herein employs passive …
mismatch in threshold voltages V th. The method described herein employs passive …